Microchip Single TN0110 1 N-Channel MOSFET, 350 mA, 100 V Enhancement, 3-Pin TO-92 TN0110N3-G
- RS Stock No.:
- 177-9742P
- Mfr. Part No.:
- TN0110N3-G
- Manufacturer:
- Microchip
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- RS Stock No.:
- 177-9742P
- Mfr. Part No.:
- TN0110N3-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Transistor Configuration | Single | |
| Series | TN0110 | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 350 mA | |
| Maximum Drain Source Voltage (Vds) | 100 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-92 | |
| Forward Voltage (Vf) | 1.5 V | |
| Height | 5.33 mm | |
| Length | 5.08 mm | |
| Maximum Drain Source Resistance (Rds) | 4.5 Ω | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 1 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Width | 4.06 mm | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Transistor Configuration Single | ||
Series TN0110 | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 350 mA | ||
Maximum Drain Source Voltage (Vds) 100 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-92 | ||
Forward Voltage (Vf) 1.5 V | ||
Height 5.33 mm | ||
Length 5.08 mm | ||
Maximum Drain Source Resistance (Rds) 4.5 Ω | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 1 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Width 4.06 mm | ||
- COO (Country of Origin):
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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