TN2540N8-G N-Channel MOSFET, 260 mA, 400 (Minimum) V TN2540, 3-Pin TO-243AA Microchip Technology

  • RS Stock No. 177-9693
  • Mfr. Part No. TN2540N8-G
  • Manufacturer Microchip
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Attribute Value
Channel Type N
Maximum Continuous Drain Current 260 mA
Maximum Drain Source Voltage 400 V
Package Type TO-243AA
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 12 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 0.6V
Maximum Power Dissipation 1.6 W
Transistor Configuration Single
Maximum Gate Source Voltage 20 V
Number of Elements per Chip 1
Width 2.6mm
Minimum Operating Temperature -55 °C
Height 1.6mm
Series TN2540
Length 4.6mm
Maximum Operating Temperature +150 °C
Forward Diode Voltage 1.8V
Temporarily out of stock - back order for despatch 12/05/2020, delivery within 6 working days
Price (VAT excluded) Each (On a Reel of 2000)
TWD 22.40
(exc. GST)
TWD 23.50
(inc. GST)
Per unit
Per Reel*
2000 +
*price indicative