ROHM R6024ENJ Type N-Channel MOSFET, 24 A, 600 V Enhancement, 3-Pin TO-263 R6024ENJTL
- RS Stock No.:
- 172-0479
- Mfr. Part No.:
- R6024ENJTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD602.00
(exc. GST)
TWD632.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 18, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | TWD120.40 | TWD602.00 |
| 125 - 245 | TWD117.40 | TWD587.00 |
| 250 - 495 | TWD115.00 | TWD575.00 |
| 500 - 745 | TWD111.80 | TWD559.00 |
| 750 + | TWD109.40 | TWD547.00 |
*price indicative
- RS Stock No.:
- 172-0479
- Mfr. Part No.:
- R6024ENJTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R6024ENJ | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 245W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.7mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R6024ENJ | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 245W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.7mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
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