R6020ENJTL N-Channel MOSFET, 20 A, 600 V R6020ENJ, 2+Tab-Pin D2PAK ROHM

  • RS Stock No. 172-0460
  • Mfr. Part No. R6020ENJTL
  • Manufacturer ROHM
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Voltage 600 V
Package Type LPTS, TO-263
Mounting Type Surface Mount
Pin Count 2 + Tab
Maximum Drain Source Resistance 360 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 231 W
Transistor Configuration Single
Maximum Gate Source Voltage ±30 V
Number of Elements per Chip 1
Height 4.7mm
Series R6020ENJ
Forward Diode Voltage 1.5V
Typical Gate Charge @ Vgs 60 nC @ 10 V
Minimum Operating Temperature -55 °C
Width 9.2mm
Maximum Operating Temperature +150 °C
Length 10.4mm
75 In stock for delivery within 4 working days
Price (VAT excluded) Each (In a Pack of 5)
TWD 89.80
(exc. GST)
TWD 94.30
(inc. GST)
units
Per unit
Per Pack*
5 - 120
TWD89.80
TWD449.00
125 - 245
TWD83.40
TWD417.00
250 - 495
TWD78.40
TWD392.00
500 - 745
TWD74.00
TWD370.00
750 +
TWD70.00
TWD350.00
*price indicative