ROHM RD3G500GN Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 RD3G500GNTL

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Subtotal (1 pack of 25 units)*

TWD1,042.50

(exc. GST)

TWD1,094.50

(inc. GST)

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Orders below TWD1,300.00 (exc. GST) cost TWD500.00.
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Units
Per unit
Per Pack*
25 - 225TWD41.70TWD1,042.50
250 - 475TWD40.70TWD1,017.50
500 - 975TWD39.70TWD992.50
1000 - 1975TWD38.70TWD967.50
2000 +TWD37.70TWD942.50

*price indicative

RS Stock No.:
172-0437
Mfr. Part No.:
RD3G500GNTL
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

40V

Series

RD3G500GN

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

31nC

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC JESD22-A114, JEDEC JESD22-C101, JEITA ED-4701/302

Width

6.4 mm

Height

2.3mm

Length

6.8mm

Automotive Standard

No

RD3G500GN is the low on - resistance MOSFET for switching application.

Low on - resistance

High power package (TO-252)

Pb-free lead plating

Halogen free

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