ROHM RD3P050SN N-Channel MOSFET, 5 A, 100 V Enhancement, 3-Pin TO-252 RD3P050SNTL1
- RS Stock No.:
- 172-0433
- Mfr. Part No.:
- RD3P050SNTL1
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD525.00
(exc. GST)
TWD551.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 1,250 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | TWD21.00 | TWD525.00 |
| 250 - 475 | TWD20.50 | TWD512.50 |
| 500 - 975 | TWD20.00 | TWD500.00 |
| 1000 - 1975 | TWD19.60 | TWD490.00 |
| 2000 + | TWD19.10 | TWD477.50 |
*price indicative
- RS Stock No.:
- 172-0433
- Mfr. Part No.:
- RD3P050SNTL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P050SN | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 15W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Width | 6.4mm | |
| Length | 6.8mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P050SN | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 15W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Width 6.4mm | ||
Length 6.8mm | ||
- COO (Country of Origin):
- JP
RD3P050SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Related links
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- ROHM RD3P100SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- ROHM RD3P200SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P200SNTL1
- ROHM RD3P200SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P200SNTL
- ROHM RD3P175SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P175SNTL1
- ROHM RD3L050SN N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- ROHM RD3P100SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P100SNTL1
