onsemi NVMFS5C670NL Type N-Channel MOSFET, 71 A, 60 V Enhancement, 5-Pin DFN NVMFS5C670NLWFAFT1G
- RS Stock No.:
- 171-8388
- Mfr. Part No.:
- NVMFS5C670NLWFAFT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD1,164.00
(exc. GST)
TWD1,222.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 1,440 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 360 | TWD58.20 | TWD1,164.00 |
| 380 - 740 | TWD56.70 | TWD1,134.00 |
| 760 + | TWD55.80 | TWD1,116.00 |
*price indicative
- RS Stock No.:
- 171-8388
- Mfr. Part No.:
- NVMFS5C670NLWFAFT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFS5C670NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 61W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFS5C670NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 61W | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications.
Low RDS(on)
Minimize Conduction Losses
Low QG and Gate capacitance
Minimize Switching Losses
Industry standard 5x6mm package Industry
Compact Design and Standard footprint for direct drop-in
Best in-class FOM (RDS(ON) x QG)
Increased efficiency, lower power dissipation
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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