MPN

Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363

Name: Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363
Brand: Toshiba
SKU: 171-2523P
Availability: InStock

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Subtotal (800 units, supplied on a reel)*

TWD1,920.00

(exc. GST)

TWD2,016.00

(inc. GST)

Limited stock

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Units	Per unit
800 - 1400	TWD2.40
1500 +	TWD2.40

*price indicative

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-363
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	1.75Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	0.39nC
	Forward Voltage Vf	-0.79V
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	150°C
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	0.9mm
	Length	2mm
	Standards/Approvals	No
	Width	1.25mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Toshiba
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-363
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 1.75Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 0.39nC
	Forward Voltage Vf -0.79V
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature 150°C
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 0.9mm
	Length 2mm
	Standards/Approvals No
	Width 1.25mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

High-Speed Switching

Low drain-source on-resistance

RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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