Toshiba Single 1 N-Channel MOSFET, 3.5 A, 100 V Enhancement, 3-Pin SOT-23 SSM3K361R,LF(B
- RS Stock No.:
- 171-2403
- Mfr. Part No.:
- SSM3K361R,LF(B
- Manufacturer:
- Toshiba
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TWD24,900.00
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Units | Per unit | Per Reel* | Saving |
|---|---|---|---|
| 3000 - 3000 | TWD8.30 | TWD24,900.00 | - |
| 6000 - 6000 | TWD7.90 | TWD23,700.00 | TWD2,400.00 |
| 9000 + | TWD7.80 | TWD23,400.00 | TWD4,500.00 |
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- RS Stock No.:
- 171-2403
- Mfr. Part No.:
- SSM3K361R,LF(B
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 92mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.8mm | |
| Length | 2.9mm | |
| Height | 700μm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 92mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 2.4W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Width 1.8mm | ||
Length 2.9mm | ||
Height 700μm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TH
Power Management Switches
DC-DC Converters
175 MOSFET
4.5 V drive
Low drain-source on-resistance
RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V)
RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)
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