Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 169-5792
- Mfr. Part No.:
- SI4403CDY-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
TWD33,250.00
(exc. GST)
TWD34,900.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 17, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | TWD13.30 | TWD33,250.00 |
| 5000 + | TWD12.90 | TWD32,250.00 |
*price indicative
- RS Stock No.:
- 169-5792
- Mfr. Part No.:
- SI4403CDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOIC | |
| Series | Si4403CDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -0.66V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.55mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOIC | ||
Series Si4403CDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -0.66V | ||
Maximum Operating Temperature 150°C | ||
Height 1.55mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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