Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 168-8748
- Mfr. Part No.:
- IRLL014NTRPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
TWD16,750.00
(exc. GST)
TWD17,600.00
(inc. GST)
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- Shipping from August 14, 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | TWD6.70 | TWD16,750.00 |
| 12500 + | TWD6.50 | TWD16,250.00 |
*price indicative
- RS Stock No.:
- 168-8748
- Mfr. Part No.:
- IRLL014NTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.739mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.739mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF
This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a VITAL role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a Compact design.
Features & Benefits
• Maximum continuous drain current of 2.8A for dependable performance
• Wide voltage range up to 55V for diverse applications
• Low drain-source on-resistance of 280mΩ minimises power losses
• High thermal stability with a maximum operating temperature of +150°C
• Enhanced gate threshold voltage options to improve switching capabilities
• Designed for surface mount applications, aiding PCB integration
Applications
• Utilised in automation systems for effective motor control
• Employed in power supply circuits for efficient voltage regulation
• Suitable for switching in electronic devices
• Integrated into battery management systems for optimised energy use
• Applicable in LED drivers to enhance control efficiency
What is the recommended mounting technique for optimal performance?
Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.
How should the maximum gate-source voltage be considered when designing circuits?
It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.
Can this component handle high temperatures in operational environments?
It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.
Is it compatible with low-voltage battery systems?
Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.
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