Toshiba TK Type N-Channel MOSFET, 56 A, 120 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 168-7983
- Mfr. Part No.:
- TK56A12N1,S4X(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD2,590.00
(exc. GST)
TWD2,719.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | TWD51.80 | TWD2,590.00 |
| 250 + | TWD46.60 | TWD2,330.00 |
*price indicative
- RS Stock No.:
- 168-7983
- Mfr. Part No.:
- TK56A12N1,S4X(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Height | 15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Length 10mm | ||
Standards/Approvals No | ||
Height 15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S