Infineon HEXFET Type P-Channel MOSFET, 10.5 A, 40 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 168-7928
- Mfr. Part No.:
- IRF7240TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 4000 units)*
TWD96,800.00
(exc. GST)
TWD101,640.00
(inc. GST)
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Last RS stock
- Final 4,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 16000 | TWD24.20 | TWD96,800.00 |
| 20000 + | TWD23.20 | TWD92,800.00 |
*price indicative
- RS Stock No.:
- 168-7928
- Mfr. Part No.:
- IRF7240TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 10.5A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF7240TRPBF
This P-Channel MOSFET excels in power management solutions. With a maximum continuous drain current of 10.5A and a drain-source voltage capability of 40V, it is designed for surface mounting in a Compact SOIC package. Measuring 5mm in length, 4mm in width and 1.5mm in height, it is suitable for various electronic applications including battery management systems.
Features & Benefits
• Supports high current loads up to 10.5A, Ideal for demanding tasks
• Operates effectively in enhancement mode for improved control
• Designed for thermal performance with a customised leadframe
• Suitable for multiple applications, saving on board space
• Compatible with standard soldering processes such as infrared and wave
Applications
• Utilised in battery management systems for monitoring performance
• Used in load management circuits requiring efficient power manipulation
• Suitable for automotive where space and efficiency are critical
• Integrated in power supplies for reliable load handling
What are the key thermal characteristics of this device?
The device features enhanced thermal characteristics due to its customised leadframe design, enabling it to operate comfortably within a junction temperature range of -55°C to +150°C.
How does the on-resistance impact overall performance?
With an exceptionally low Rds(on) of just 25mΩ, this MOSFET significantly reduces power losses during operation, enhancing the efficiency of power circuits and improving heat dissipation.
Can it be used in high-frequency applications?
Yes, the device's parameters, such as the typical gate charge of 73 nC at 10 V, allow for effective operation in high-frequency applications, making it suitable for various electronic devices.
What should be considered for optimal use in circuits?
It's essential to ensure that the gate-source voltage remains within the maximum limits of ±20V to prevent damage, thereby maintaining device reliability and performance in the application.
Related links
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