Infineon CoolMOS CE N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD22,200.00
(exc. GST)
TWD23,310.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 01, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | TWD7.40 | TWD22,200.00 |
| 15000 + | TWD7.10 | TWD21,300.00 |
*price indicative
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Package Type | SOT-223 | |
| Series | CoolMOS CE | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Forward Voltage Vf | 830mV | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.7mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 550V | ||
Package Type SOT-223 | ||
Series CoolMOS CE | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Forward Voltage Vf 830mV | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.7mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- RS PRO Black 3 mm² Hook Up Wire 30m
- RS PRO RS-172 Temperature & Humidity Data Logger
- 2961105 | Phoenix Contact PCB Mount Power Relay 6A Switching Current, SPDT
- Tedea Huntleigh Low Profile Load Cell Compression Measure
- ABB D45 Pluto Series Safety Controller 6 Safety Outputs, 24 V dc
- TE Connectivity Coaxial Cable RG400 Coaxial, Unterminated
- RS PRO I/O Extension Module for Use with RS PRO Logic Modules Digital
- Fluke 289 Handheld Digital Multimeter 10A ac Max 1000V ac Max