N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXYS IXFH14N60P
- RS Stock No.:
- 168-4483
- Mfr. Part No.:
- IXFH14N60P
- Manufacturer:
- IXYS
Available for back order.
Price (VAT excluded) Each (In a Tube of 30)
TWD135.20
(exc. GST)
TWD141.96
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | TWD135.20 | TWD4,056.00 |
| 150 + | TWD121.70 | TWD3,651.00 |
*price indicative
- RS Stock No.:
- 168-4483
- Mfr. Part No.:
- IXFH14N60P
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247 |
| Series | HiperFET, Polar |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 550 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 5.3mm |
| Maximum Operating Temperature | +150 °C |
| Length | 16.26mm |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |