DiodesZetex Isolated 2 Type P-Channel MOSFET, 5.5 A, 30 V Enhancement, 8-Pin SOIC ZXMP3A16DN8TA
- RS Stock No.:
- 166-0484
- Mfr. Part No.:
- ZXMP3A16DN8TA
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 500 units)*
TWD14,200.00
(exc. GST)
TWD14,910.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 11, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 500 | TWD28.40 | TWD14,200.00 |
| 1000 + | TWD27.50 | TWD13,750.00 |
*price indicative
- RS Stock No.:
- 166-0484
- Mfr. Part No.:
- ZXMP3A16DN8TA
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 2.1W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- TH
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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