Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

TWD30,250.00

(exc. GST)

TWD31,750.00

(inc. GST)

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2500 - 2500TWD12.10TWD30,250.00
5000 +TWD11.70TWD29,250.00

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RS Stock No.:
165-7255
Mfr. Part No.:
SI4599DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

40V

Series

Si4599DY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.045Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1.55mm

Standards/Approvals

JEDEC JS709A, RoHS

Width

4 mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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