STMicroelectronics FDmesh Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 165-6595
- Mfr. Part No.:
- STD13NM60ND
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 reel of 2500 units)*
TWD142,500.00
(exc. GST)
TWD149,625.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | TWD57.00 | TWD142,500.00 |
| 5000 - 22500 | TWD55.30 | TWD138,250.00 |
| 25000 + | TWD49.80 | TWD124,500.00 |
*price indicative
- RS Stock No.:
- 165-6595
- Mfr. Part No.:
- STD13NM60ND
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | FDmesh | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 109W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series FDmesh | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 109W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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