STMicroelectronics MDmesh M2 N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-263 STB13N60M2

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Subtotal (1 reel of 1000 units)*

TWD50,600.00

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TWD53,130.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 1000TWD50.60TWD50,600.00
2000 +TWD49.10TWD49,100.00

*price indicative

RS Stock No.:
165-6548
Mfr. Part No.:
STB13N60M2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

650V

Series

MDmesh M2

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

-25V, +25V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.4mm

Width

9.35mm

Standards/Approvals

No

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN

N-channel MDmesh™ M2 Series, STMicroelectronics


A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics


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