- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
375 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Tube of 25)
TWD81.00
(exc. GST)
TWD85.05
(inc. GST)
Units | Per unit | Per Tube* |
25 - 25 | TWD81.00 | TWD2,025.00 |
50 - 75 | TWD72.40 | TWD1,810.00 |
100 + | TWD70.80 | TWD1,770.00 |
*price indicative |
- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
Vishay D Series Power MOSFETs
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 500 V |
Series | D Series |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 250 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 278 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 5.31mm |
Number of Elements per Chip | 1 |
Length | 15.87mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Height | 20.82mm |