Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

RS Stock No.:: 153-1880
Mfr. Part No.:: NX7002BKXBZ
Manufacturer:: Nexperia

Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

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Subtotal (1 pack of 50 units)*

TWD385.00

(exc. GST)

TWD404.00

(inc. GST)

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Units	Per unit	Per Pack*
50 - 1200	TWD7.70	TWD385.00
1250 - 2450	TWD7.50	TWD375.00
2500 +	TWD7.40	TWD370.00

*price indicative

RS Stock No.:: 153-1880
Mfr. Part No.:: NX7002BKXBZ
Manufacturer:: Nexperia

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	N
	Product Type	Trench MOSFET
	Maximum Continuous Drain Current Id	260mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	DFN
	Series	Trench MOSFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.7Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	4032mW
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Transistor Configuration	Dual
	Height	360μm
	Length	1.15mm
	Standards/Approvals	No
	Width	1.05mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Nexperia
	Channel Type N
	Product Type Trench MOSFET
	Maximum Continuous Drain Current Id 260mA
	Maximum Drain Source Voltage Vds 60V
	Package Type DFN
	Series Trench MOSFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.7Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 4032mW
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Transistor Configuration Dual
	Height 360μm
	Length 1.15mm
	Standards/Approvals No
	Width 1.05mm
	Number of Elements per Chip 2
	Automotive Standard No

N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

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