Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23

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Bulk discount available

Subtotal (1 reel of 3000 units)*

TWD20,400.00

(exc. GST)

TWD21,420.00

(inc. GST)

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  • 6,000 unit(s) shipping from July 29, 2026
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Units
Per unit
Per Reel*
3000 - 3000TWD6.80TWD20,400.00
6000 +TWD6.60TWD19,800.00

*price indicative

RS Stock No.:
153-0707
Mfr. Part No.:
PMV27UPEAR
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-5.6A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

4.15W

Typical Gate Charge Qg @ Vgs

14.7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1mm

Length

3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

LED driver

Power management

High-side loadswitch

Switching circuits

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