Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV65XPEAR

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing option

Subtotal (1 pack of 50 units)*

TWD490.00

(exc. GST)

TWD514.50

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 3,000 unit(s) shipping from July 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
50 - 700TWD9.80TWD490.00
750 - 1450TWD9.60TWD480.00
1500 +TWD9.40TWD470.00

*price indicative

Packaging Options:
RS Stock No.:
151-3159
Mfr. Part No.:
PMV65XPEAR
Manufacturer:
Nexperia
Find similar products by selecting one or more attributes.
Select all

Brand

Nexperia

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-3.3A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6.25W

Maximum Operating Temperature

150°C

Length

3mm

Standards/Approvals

No

Height

1.1mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Very fast switching

Enhanced power dissipation capability: Ptot = 890 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy