onsemi PowerTrench Type N-Channel MOSFET, 57 A, 100 V Enhancement, 8-Pin PQFN FDMC86184
- RS Stock No.:
- 146-4088
- Mfr. Part No.:
- FDMC86184
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD543.00
(exc. GST)
TWD570.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,880 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD54.30 | TWD543.00 |
| 750 - 1490 | TWD53.00 | TWD530.00 |
| 1500 + | TWD52.20 | TWD522.00 |
*price indicative
- RS Stock No.:
- 146-4088
- Mfr. Part No.:
- FDMC86184
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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