onsemi PowerTrench N-Channel MOSFET, 167 A, 150 V Enhancement, 3-Pin TO-247 FDH055N15A
- RS Stock No.:
- 146-2044
- Mfr. Part No.:
- FDH055N15A
- Manufacturer:
- onsemi
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- RS Stock No.:
- 146-2044
- Mfr. Part No.:
- FDH055N15A
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 167A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-247 | |
| Series | PowerTrench | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.25V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 429W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.82mm | |
| Length | 20.82mm | |
| Width | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 167A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-247 | ||
Series PowerTrench | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.25V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 429W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.82mm | ||
Length 20.82mm | ||
Width 15.87mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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