N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

RS Stock No.:: 146-1755
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Price Each (In a Tube of 30)**

TWD260.40

(exc. GST)

TWD273.42

(inc. GST)

58 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Tube**
30 - 120	TWD260.40	TWD7,812.00
150 +	TWD234.30	TWD7,029.00

**price indicative

RS Stock No.:: 146-1755
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

IXFT60N50P3, IXFQ60N50P3, IXFH60N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	500 V
Package Type	TO-3PN
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	15.8mm
Typical Gate Charge @ Vgs	96 nC @ 10 V
Width	4.9mm
Minimum Operating Temperature	-55 °C
Height	20.3mm

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series