DiodesZetex DMN10H099SFG N-Channel MOSFET, 5.8 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H099SFG-7
- RS Stock No.:
- 146-0954
- Mfr. Part No.:
- DMN10H099SFG-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2000 units)*
TWD24,200.00
(exc. GST)
TWD25,400.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | TWD12.10 | TWD24,200.00 |
| 4000 + | TWD11.60 | TWD23,200.00 |
*price indicative
- RS Stock No.:
- 146-0954
- Mfr. Part No.:
- DMN10H099SFG-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333 | |
| Series | DMN10H099SFG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.2nC | |
| Maximum Power Dissipation Pd | 2.31W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 770mV | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.35mm | |
| Standards/Approvals | No | |
| Height | 800μm | |
| Length | 3.35mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333 | ||
Series DMN10H099SFG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.2nC | ||
Maximum Power Dissipation Pd 2.31W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 770mV | ||
Maximum Operating Temperature 150°C | ||
Width 3.35mm | ||
Standards/Approvals No | ||
Height 800μm | ||
Length 3.35mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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