N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7

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Bulk discount available

Price Each (On a Reel of 2000)**

TWD10.80

(exc. GST)

TWD11.34

(inc. GST)

Temporarily out of stock - back order for despatch 28/02/2025, delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
2000 - 2000	TWD10.80	TWD21,600.00
4000 +	TWD10.30	TWD20,600.00

**price indicative

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	100 V
Package Type	PowerDI3333-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	99 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	2.31 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.35mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	3.35mm
Typical Gate Charge @ Vgs	25.2 nC @ 10 V
Transistor Material	Si
Forward Diode Voltage	0.77V
Height	0.8mm
Minimum Operating Temperature	-55 °C