Vishay IRLI N-Channel MOSFET, 9.9 A, 200 V Enhancement, 3-Pin TO-220 IRLI640GPBF
- RS Stock No.:
- 145-1792
- Mfr. Part No.:
- IRLI640GPBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD3,200.00
(exc. GST)
TWD3,360.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD64.00 | TWD3,200.00 |
| 100 - 150 | TWD62.70 | TWD3,135.00 |
| 200 + | TWD61.20 | TWD3,060.00 |
*price indicative
- RS Stock No.:
- 145-1792
- Mfr. Part No.:
- IRLI640GPBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRLI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.8mm | |
| Standards/Approvals | No | |
| Height | 9.8mm | |
| Width | 10.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRLI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Length 4.8mm | ||
Standards/Approvals No | ||
Height 9.8mm | ||
Width 10.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
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