Vishay IRF9540S Type P-Channel MOSFET, 19 A, 100 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 145-1595
- Mfr. Part No.:
- IRF9540SPBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD2,150.00
(exc. GST)
TWD2,257.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 800 unit(s) shipping from March 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD43.00 | TWD2,150.00 |
| 100 - 150 | TWD42.00 | TWD2,100.00 |
| 200 + | TWD41.10 | TWD2,055.00 |
*price indicative
- RS Stock No.:
- 145-1595
- Mfr. Part No.:
- IRF9540SPBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | IRF9540S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Forward Voltage Vf | -100V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series IRF9540S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Forward Voltage Vf -100V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRF9540S Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF9540SPBF
- Vishay IRF9540 Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9540PBF
- Vishay IRF9540 Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF9Z34NSTRLPBF
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay IRF9630S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay IRF9640S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263