Vishay SUP90220E Type N-Channel MOSFET, 64 A, 200 V Enhancement, 4-Pin TO-220 SUP90220E-GE3
- RS Stock No.:
- 134-9707
- Mfr. Part No.:
- SUP90220E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD160.00
(exc. GST)
TWD168.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 28 | TWD80.00 | TWD160.00 |
| 30 - 58 | TWD76.50 | TWD153.00 |
| 60 - 118 | TWD73.50 | TWD147.00 |
| 120 + | TWD71.00 | TWD142.00 |
*price indicative
- RS Stock No.:
- 134-9707
- Mfr. Part No.:
- SUP90220E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | SUP90220E | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31.6nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.49mm | |
| Standards/Approvals | No | |
| Length | 10.51mm | |
| Width | 4.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series SUP90220E | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31.6nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.49mm | ||
Standards/Approvals No | ||
Length 10.51mm | ||
Width 4.65 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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