Vishay SiR632DP N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3

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RS Stock No.:
134-9159
Mfr. Part No.:
SIR632DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

150V

Series

SiR632DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

69.5W

Maximum Gate Source Voltage Vgs

-20V, +20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.26mm

Height

1.12mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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