Vishay SIRS5702DP Type N-Channel Single MOSFETs, 119 A, 150 V Enhancement, 8-Pin PowerPAK

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tape of 1 unit)*

TWD107.00

(exc. GST)

TWD112.35

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 6,000 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s)
Per Tape
1 - 9TWD107.00
10 - 24TWD104.00
25 - 99TWD102.00
100 - 499TWD87.00
500 +TWD82.00

*price indicative

RS Stock No.:
653-131
Mfr. Part No.:
SIRS5702DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

150V

Package Type

PowerPAK

Series

SIRS5702DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0072Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44nC

Maximum Power Dissipation Pd

245W

Maximum Operating Temperature

150°C

Width

5.10 mm

Height

0.95mm

Standards/Approvals

No

Length

6.10mm

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

Related links