ROHM SCT2H12NZ Type N-Channel MOSFET, 3.7 A, 1700 V Enhancement, 3-Pin TO-3PFM SCT2H12NZGC11
- RS Stock No.:
- 133-2860
- Mfr. Part No.:
- SCT2H12NZGC11
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD426.00
(exc. GST)
TWD447.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- 14 left, ready to ship from another location
- Final 104 unit(s) shipping from February 02, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD213.00 | TWD426.00 |
| 10 - 18 | TWD209.00 | TWD418.00 |
| 20 - 98 | TWD204.00 | TWD408.00 |
| 100 - 198 | TWD199.00 | TWD398.00 |
| 200 + | TWD195.00 | TWD390.00 |
*price indicative
- RS Stock No.:
- 133-2860
- Mfr. Part No.:
- SCT2H12NZGC11
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | SCT2H12NZ | |
| Package Type | TO-3PFM | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Length | 16mm | |
| Width | 5 mm | |
| Height | 21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series SCT2H12NZ | ||
Package Type TO-3PFM | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Length 16mm | ||
Width 5 mm | ||
Height 21mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Related links
- Infineon BSR Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223 BSR802NL6327HTSA1
- Infineon BSR Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223
- Vishay IRFI Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220 IRFI730GPBF
- DiodesZetex DMN10 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333 DMN10H170SFGQ-7
- Vishay IRFI Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- DiodesZetex DMN10 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333
- onsemi Isolated PowerTrench 2 Type P 3.7 A 6-Pin MLP FDMA1032CZ
- Infineon HEXFET Type N-Channel MOSFET 200 V, 8-Pin SO-8