ROHM RSJ151P10 Type P-Channel MOSFET, 15 A, 100 V Enhancement, 3-Pin TO-263 RSJ151P10TL
- RS Stock No.:
- 133-2842
- Mfr. Part No.:
- RSJ151P10TL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD236.00
(exc. GST)
TWD247.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 820 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD47.20 | TWD236.00 |
| 25 - 45 | TWD45.80 | TWD229.00 |
| 50 - 245 | TWD45.00 | TWD225.00 |
| 250 - 495 | TWD43.60 | TWD218.00 |
| 500 + | TWD42.60 | TWD213.00 |
*price indicative
- RS Stock No.:
- 133-2842
- Mfr. Part No.:
- RSJ151P10TL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | RSJ151P10 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.35W | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 4.7mm | |
| Width | 9.2mm | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series RSJ151P10 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.35W | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 4.7mm | ||
Width 9.2mm | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- JP
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Related links
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 SPD15P10PLGBTMA1
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TSDSON
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TSDSON SPD15P10PGBTMA1
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- ROHM RSJ250P10 Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 RSJ250P10TL
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 TJ15P04M3
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263