Infineon HEXFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 8-Pin PQFN IRFH5210TRPBF
- RS Stock No.:
- 130-0977
- Mfr. Part No.:
- IRFH5210TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD254.00
(exc. GST)
TWD266.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 7,980 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 995 | TWD50.80 | TWD254.00 |
| 1000 - 1995 | TWD49.20 | TWD246.00 |
| 2000 + | TWD46.40 | TWD232.00 |
*price indicative
- RS Stock No.:
- 130-0977
- Mfr. Part No.:
- IRFH5210TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN IRFH5300TRPBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN IRFH7932TRPBF