IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

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Subtotal (1 unit)*

TWD978.00

(exc. GST)

TWD1,026.90

(inc. GST)

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1 - 2TWD978.00
3 - 4TWD958.00
5 +TWD939.00

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RS Stock No.:
125-8043
Mfr. Part No.:
IXFN420N10T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

670nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.07kW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

25.07 mm

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Automotive Standard

No

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