IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 unit)*

TWD950.00

(exc. GST)

TWD997.50

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 81 unit(s) ready to ship from another location
  • Plus 875 unit(s) shipping from May 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 2TWD950.00
3 - 4TWD926.00
5 +TWD912.00

*price indicative

RS Stock No.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

525nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

830W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links