Toshiba DTMOSIV Type N-Channel MOSFET, 15.8 A, 600 V Enhancement, 3-Pin TO-247 TK16N60W5,S1VF(S
- RS Stock No.:
- 125-0543
- Mfr. Part No.:
- TK16N60W5,S1VF(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD675.00
(exc. GST)
TWD708.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD135.00 | TWD675.00 |
| 25 - 45 | TWD131.80 | TWD659.00 |
| 50 - 120 | TWD128.80 | TWD644.00 |
| 125 - 245 | TWD125.60 | TWD628.00 |
| 250 + | TWD122.40 | TWD612.00 |
*price indicative
- RS Stock No.:
- 125-0543
- Mfr. Part No.:
- TK16N60W5,S1VF(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.94mm | |
| Width | 5.02 mm | |
| Height | 20.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Operating Temperature 150°C | ||
Length 15.94mm | ||
Width 5.02 mm | ||
Height 20.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
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