Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220 IRF540ZPBF
- RS Stock No.:
- 124-9001
- Mfr. Part No.:
- IRF540ZPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD1,925.00
(exc. GST)
TWD2,021.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 1,000 unit(s) shipping from November 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD38.50 | TWD1,925.00 |
| 100 - 150 | TWD37.60 | TWD1,880.00 |
| 200 + | TWD34.90 | TWD1,745.00 |
*price indicative
- RS Stock No.:
- 124-9001
- Mfr. Part No.:
- IRF540ZPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 92W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 92W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540ZPBF
This MOSFET is designed to deliver high performance in various electronic applications. Capable of handling a maximum continuous drain current of 36A and a drain-source voltage of 100V, its TO-220AB package ensures effective heat dissipation and stability. With maximum power dissipation rated at 92W, this N-channel device is particularly suited for demanding tasks in electrical and mechanical industries.
Features & Benefits
• Utilises HEXFET technology for enhanced efficiency
• Low Rds(on) of 26.5mΩ minimises power loss
• Fast switching speeds improve operational efficiency
• Supports enhancement mode for reliable performance
• Designed to handle repetitive avalanche conditions
Applications
• Used for motor control and power management
• Ideal for switching power supplies and converters
• Suitable for automotive requiring high efficiency
• Implemented in industrial automation systems
• Effective in electronic devices needing robust performance
What is the significance of the low Rds(on) rating in its performance?
The low Rds(on) rating reduces conduction losses, leading to higher efficiency during operation. It allows for improved thermal performance, which is critical in high-current applications.
How does the maximum drain-source voltage affect operational reliability?
The 100V drain-source voltage rating provides a substantial safety margin for applications, ensuring reliable operation under varying voltage conditions, thus preventing breakdown.
Can this MOSFET handle high-temperature environments?
With a maximum operating temperature of 175°C, it is designed to operate reliably in high-temperature conditions, making it suitable for challenging environments found in automotive and industrial applications.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 AUIRF540Z
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL540NPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220