ROHM RSD140P06 Type P-Channel MOSFET, 14 A, 60 V Enhancement, 3-Pin SOT-428 RSD140P06TL
- RS Stock No.:
- 124-6820
- Mfr. Part No.:
- RSD140P06TL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD273.00
(exc. GST)
TWD286.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Being discontinued
- Final 880 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD27.30 | TWD273.00 |
| 50 - 90 | TWD26.60 | TWD266.00 |
| 100 - 240 | TWD25.90 | TWD259.00 |
| 250 - 490 | TWD25.20 | TWD252.00 |
| 500 + | TWD24.70 | TWD247.00 |
*price indicative
- RS Stock No.:
- 124-6820
- Mfr. Part No.:
- RSD140P06TL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-428 | |
| Series | RSD140P06 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 108mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 20W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.5 mm | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-428 | ||
Series RSD140P06 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 108mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 20W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5.5 mm | ||
Height 2.3mm | ||
Length 6.5mm | ||
- COO (Country of Origin):
- TH
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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