onsemi UltraFET N-Channel MOSFET, 10.6 A, 60 V Enhancement, 8-Pin MLP FDMS5672
- RS Stock No.:
- 124-1701
- Mfr. Part No.:
- FDMS5672
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD223,500.00
(exc. GST)
TWD234,660.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 06, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD74.50 | TWD223,500.00 |
| 6000 + | TWD72.30 | TWD216,900.00 |
*price indicative
- RS Stock No.:
- 124-1701
- Mfr. Part No.:
- FDMS5672
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | UltraFET | |
| Package Type | MLP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 750μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series UltraFET | ||
Package Type MLP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Width 6mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 750μm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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