onsemi QFET Type P-Channel MOSFET, 19 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 124-1401
- Mfr. Part No.:
- FQPF27P06
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD2,240.00
(exc. GST)
TWD2,352.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD44.80 | TWD2,240.00 |
| 100 - 150 | TWD43.50 | TWD2,175.00 |
| 200 + | TWD42.10 | TWD2,105.00 |
*price indicative
- RS Stock No.:
- 124-1401
- Mfr. Part No.:
- FQPF27P06
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | QFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 120W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -4V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series QFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 120W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -4V | ||
Maximum Operating Temperature 175°C | ||
Height 16.3mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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