DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMG6602SVT-7
- RS Stock No.:
- 121-9598
- Mfr. Part No.:
- DMG6602SVT-7
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD48,000.00
(exc. GST)
TWD50,400.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 75,000 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD16.00 | TWD48,000.00 |
| 6000 - 9000 | TWD15.60 | TWD46,800.00 |
| 12000 + | TWD15.10 | TWD45,300.00 |
*price indicative
- RS Stock No.:
- 121-9598
- Mfr. Part No.:
- DMG6602SVT-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Maximum Power Dissipation Pd | 1.27W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 800mV | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Width | 1.6mm | |
| Standards/Approvals | J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | |
| Length | 2.9mm | |
| Height | 900μm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Maximum Power Dissipation Pd 1.27W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 800mV | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Width 1.6mm | ||
Standards/Approvals J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | ||
Length 2.9mm | ||
Height 900μm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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