N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190P6FKSA1

RS Stock No.:: 110-9099P
Mfr. Part No.:: IPW60R190P6FKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190P6FKSA1

The image is for reference only, please refer to product details and specifications

100 In stock for delivery within 6 working days

Added

Price (VAT excluded) Each (Supplied in a Tube)

TWD112.60

(exc. GST)

TWD118.23

(inc. GST)

Units	Per unit
10 - 10	TWD112.60
15 +	TWD105.40

RS Stock No.:: 110-9099P
Mfr. Part No.:: IPW60R190P6FKSA1
Manufacturer:: Infineon

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS^™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247
Series	CoolMOS P6
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	151 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	5.21mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	16.13mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Transistor Material	Si
Forward Diode Voltage	0.9V
Minimum Operating Temperature	-55 °C
Height	21.1mm