STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 103-1992
- Mfr. Part No.:
- STW28NM50N
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
TWD3,774.00
(exc. GST)
TWD3,962.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 360 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD125.80 | TWD3,774.00 |
| 60 - 90 | TWD123.10 | TWD3,693.00 |
| 120 + | TWD120.30 | TWD3,609.00 |
*price indicative
- RS Stock No.:
- 103-1992
- Mfr. Part No.:
- STW28NM50N
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 158mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 158mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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