STMicroelectronics N Channel Mosfet STH4N150 N-Channel Power MOSFET, 2.6 A, 1.5 kV MOSFET, 3-Pin H2PAK-2 STH4N150-2AG
- RS Stock No.:
- 881-431
- Mfr. Part No.:
- STH4N150-2AG
- Manufacturer:
- STMicroelectronics
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD112.00
(exc. GST)
TWD117.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 16, 2027
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Units | Per unit |
|---|---|
| 1 - 9 | TWD112.00 |
| 10 - 24 | TWD99.00 |
| 25 - 99 | TWD89.00 |
| 100 - 499 | TWD77.00 |
| 500 + | TWD63.00 |
*price indicative
- RS Stock No.:
- 881-431
- Mfr. Part No.:
- STH4N150-2AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 1.5kV | |
| Package Type | H2PAK-2 | |
| Series | STH4N150 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | MOSFET | |
| Typical Gate Charge Qg @ Vgs | 35.1nC | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N Channel Mosfet | |
| Height | 15.8mm | |
| Length | 10.4mm | |
| Width | 4.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 1.5kV | ||
Package Type H2PAK-2 | ||
Series STH4N150 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode MOSFET | ||
Typical Gate Charge Qg @ Vgs 35.1nC | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N Channel Mosfet | ||
Height 15.8mm | ||
Length 10.4mm | ||
Width 4.7mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET developed by using the PowerMESH technology. This device is designed to ensure a high level of voltage and robustness for the automotive market.
Very low gate charge
100% avalanche tested
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