Vishay TrenchFET N channel-Channel Automotive MOSFET, 49 A, 80 V MOSFET, 4-Pin PowerPAK SO-8L SQJ183ELP-T1_GE3
- RS Stock No.:
- 790-424
- Mfr. Part No.:
- SQJ183ELP-T1_GE3
- Manufacturer:
- Vishay
N
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Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
TWD459.00
(exc. GST)
TWD482.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 12, 2027
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD45.90 | TWD459.00 |
| 100 - 490 | TWD28.40 | TWD284.00 |
| 500 - 990 | TWD22.10 | TWD221.00 |
| 1000 + | TWD14.90 | TWD149.00 |
*price indicative
- RS Stock No.:
- 790-424
- Mfr. Part No.:
- SQJ183ELP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Automotive MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0295Ω | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 147W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Automotive MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0295Ω | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 147W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay Automotive N-Channel MOSFET delivers superior performance as a power switching device. It is designed for high-efficiency applications, offering excellent thermal performance and drive capabilities.
TrenchFET technology ensures lower on-state resistance
AEC Q101 qualified for automotive reliability
Comprehensive thermal resistance ratings enhance heat dissipation
Single Pulse avalanche current rating maximises durability
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