ROHM N channel-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1
- RS Stock No.:
- 780-669
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
N
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TWD255.00
(exc. GST)
TWD267.76
(inc. GST)
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In Stock
- 760 unit(s) ready to ship from another location
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD127.50 | TWD255.00 |
| 20 - 98 | TWD112.50 | TWD225.00 |
| 100 + | TWD90.50 | TWD181.00 |
*price indicative
- RS Stock No.:
- 780-669
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 0V | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 15.5mm | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 0V | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Length 15.5mm | ||
Width 10.2mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.
Drain to source voltage of 1700 V
Continuous drain current of 3.9 A
1.15 Ohm typical on-resistance
High power dissipation of 39 W
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