STMicroelectronics STHU65N1 N-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG
- RS Stock No.:
- 762-553
- Mfr. Part No.:
- STHU65N110DM9AG
- Manufacturer:
- STMicroelectronics
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- RS Stock No.:
- 762-553
- Mfr. Part No.:
- STHU65N110DM9AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HU3PAK | |
| Series | STHU65N1 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Width | 14.1mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 11.9mm | |
| Height | 950μm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HU3PAK | ||
Series STHU65N1 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Width 14.1mm | ||
Standards/Approvals AEC-Q101 | ||
Length 11.9mm | ||
Height 950μm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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