Vishay SiS N channel-Channel MOSFET, 91 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SiSD4604LDN

N

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Subtotal (1 unit)*

TWD57.00

(exc. GST)

TWD59.85

(inc. GST)

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Units
Per unit
1 - 9TWD57.00
10 - 24TWD37.00
25 - 99TWD20.00
100 +TWD19.00

*price indicative

RS Stock No.:
735-141
Mfr. Part No.:
SiSD4604LDN
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

60V

Series

SiS

Package Type

PowerPAK 1212

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0034Ω

Channel Mode

Enhancement

Forward Voltage Vf

60V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Operating Temperature

150°C

Height

1mm

Standards/Approvals

RoHS

Length

4mm

Width

4mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

57W power dissipation

28A continuous drain current

Low 15nC maximum total gate charge

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